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| 580 Pleasant St. Watertown, MA 02172 PH: (617) 926-0404 FAX: (617) 924-1235 2N3501 Features * * * * Meets MIL-S-19500/366 Collector-Base Voltage 150V Collector Current: 500 mA Fast Switching 1265 nS 150 Volts 500mAmps NPN BIPOLAR TRANSISTOR Maximum Ratings RATING Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current--Continuous Total Device Dissipation o @ T A = 25 C o Derate above 25 C Total Device Dissipation o @ T C = 25 C o Derate above 25 C Operating Temperature Range Storage Temperature Range Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case SYMBOL VCEO VCBO VEBO IC PD MAX. 150 150 6.0 300 1.0 5.71 PD 5.0 28.6 -55 to +200 -55 to +200 175 35 Watts o mW/ C o C o o o UNIT Vdc Vdc Vdc mAdc Watt o mW/ C TJ TS RJA RJC C C/W C/W Mechanical Outline Datasheet# MSC0282A 5/19/97 2N3501 Electrical Parameters (TA @ 25C unless otherwise specified) CHARACTERISTICS Off Characteristics Collector-Emitter Breakdown Voltage(1) (I C = 10 mAdc, I B = 0) Collector-Base Breakdown Voltage (I C = 10 Adc, IE = 0) Emitter-Base Breakdown Voltage (I E = 10 Adc, IC = 0) Collector Cutoff Current (V CB = 75 Vdc, I E = 0) o (V CB = 75 Vdc, I E = 0, TA = 150 C) Emitter Cutoff Current (V EB(off) = 4.0 Vdc, I C = 0) D.C. Current Gain (I C = 0.1 mAdc, V CE = 10 Vdc) (I C = 1.0 mAdc, V CE = 10 Vdc) (I C = 10 mAdc, V CE = 10 Vdc)(1) (I C = 150 mAdc, V CE = 10 Vdc)(1) (I c = 150 mAdc, V CE = 10Vdc) @ 55C (I C = 300 mAdc, V CE = 10 Vdc)(1) Collector-Emitter Saturation Voltage(1) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 150 mAdc, I B = 15 mAdc) Base-Emitter Saturation Voltage(1) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 150 mAdc, I B = 15 mAdc) Magnitude of common emitter small-signal short-circuit forward current transfer ratio (V CE = 20 Vdc, I C = 20 mAdc, f = 100 MHz) Output Capacitance (V CB = 10 Vdc, I E = 0, 100kHz < f < 1MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, 100kHz < f < 100MHz) Small -signal Current Gain (I c = 10mAdc, V CE = 10Vdc, f = 1.0 kHz) Noise figure (V CE = 10Vdc, IC = 0.5mAdc; R g = 1kohms, f = 1MHz) Noise figure ( V CE = 10Vdc, I C = 0.5mAdc; R g = 1kohms, f = 1MHz) Turn - on time ( V EB = 12Vdc, I C = 150mAdc, I B1 = 15mAdc) Turn - off time ( I C = 150mAdc, I B1 = IB2 = -15mAdc) SYMBOL BVCEO 150 BVCBO 150 BVEBO 6.0 ICBO --IEBO -hFE 35 50 75 100 45 20 VCE(Sat) --VBE(Sat) --/hfe/ 1.5 ---0.8 1.2 8 -pf -CIBO -hfe 75 NF NF ton toff -300 16 6 115 1150 dB dB nS nS -80 -8.0 pf --0.2 0.4 Vdc ---------300 --Vdc -25 ---0.05 50 nAdc --Adc --Vdc --Vdc MIN. TYP. MAX. UNIT Vdc COBO (1) Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% Datasheet# MSC0282A 5/19/97 |
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